Hiroshima University

Provided Services (Already available)

Design

  • Design for Integration of CMOS Integrated Circuits and High-Value-Added Functions (e.g., Sensors, Photonics)
  • Power Device Design (e.g., SiC, GaN)

Prototype

  • CMOS Integrated Circuits (Gate Lengths: 0.1μm, 0.18μm, 5μm for training programs), SiC/GaN Power Semiconductor Devices
  • Devices integrating CMOS circuits prototyped at institutions such as UTokyo VDEC with high-value-added functions
  • Transistors (Si, GaN, SiC, diamond, oxides, etc.)

Evaluation

  • Electrical measurement and evaluation of CMOS integrated circuits, MOSFETs, and power semiconductor devices (withstanding voltage up to 3 kV)

Provided Services (Provided in future)

To Be Determined.

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  • 【Last updated】2025/07/03
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