【公開日：2025.06.10】【最終更新日：2025.05.19】
課題データ / Project Data
課題番号 / Project Issue Number
24RO0030
利用課題名 / Title
Study on the solution based MoS2 Films as a channel materials in FETs
利用した実施機関 / Support Institute
広島大学 / Hiroshima Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）革新的なエネルギー変換を可能とするマテリアル/Materials enabling innovative energy conversion（副 / Sub）-
キーワード / Keywords
MoS₂,-FETs,2D layered semiconductor,vertical integration,リソグラフィ/ Lithography,光リソグラフィ/ Photolithgraphy
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
Alam Md Iftekharul
所属名 / Affiliation
広島大学半導体産業技術研究所
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Currently,we are working on integrating solution-prosessed MoS2 films as channel materials in 2D field-effect transistors(FETs）to observe their real electrical properties.We are still optimizing the laser exposure wavelength to achieve high-quality FET devices using maskless lithography.
実験 / Experimental
The MoS2-FETs were fabricated on Si3N4/Si substrates.Maskless lithography using the MLA150 system from Heidelberg was employed to create patterns for both the MoS2 channel and the source/draom(S/D）metal contacts.
結果と考察 / Results and Discussion
Figure 1 shows the
optical microscope images of the fabricated MoS2 field-effect transistors (FETs)
with varying channel lengths and widths. The MoS2 channels were patterned between
the source and drain electrodes. However, in several devices, the MoS2 channel appears to be missing
between the two electrodes. This issue is likely associated with the laser
exposure parameters used during the photolithography or etching steps in the
fabrication process. In particular, the wavelength and power of the laser used
for exposure may have contributed to partial or complete removal or degradation
of the MoS2
layer in specific regions. As a result, the continuity of the channel was
compromised in those devices.
To overcome this challenge, we are currently
investigating the effect of laser exposure wavelength and optimizing the
process to preserve the integrity of the MoS2 layer during fabrication. By
fine-tuning these parameters, we aim to achieve consistent and reproducible
channel formation across all devices. This optimization process is still
ongoing. Once the channel continuity is reliably established, we plan to
conduct comprehensive electrical measurements to evaluate the actual
performance characteristics of the MoS2-FETs, including their transfer and
output behavior, mobility, and on/off current ratio.
図・表・数式 / Figures, Tables and Equations
Fig. 1: Optical images of MoS2-FETs
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件