【公開日：2025.06.10】【最終更新日：2025.04.16】
課題データ / Project Data
課題番号 / Project Issue Number
24NM5288
利用課題名 / Title
Lead-free stable and high-efficiency perovskite solar cell
利用した実施機関 / Support Institute
物質・材料研究機構 / NIMS
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）マテリアルの高度循環のための技術/Advanced materials recycling technologies（副 / Sub）-
キーワード / Keywords
太陽電池/Solar cell,核磁気共鳴/ Nuclear magnetic resonance,走査プローブ顕微鏡/ Scanning probe microscope,赤外・可視・紫外分光/ Infrared/visible/ultraviolet spectroscopy
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
イスラム アシュラフル
所属名 / Affiliation
物質・材料研究機構
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
Miwako Takano
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）,技術代行/Technology Substitution
利用した主な設備 / Equipment Used in This Project
NM-227：電界放出形走査電子顕微鏡（SU8000）
NM-215：卓上型X線回折計_Cu_SMF
NM-011：フーリエ変換赤外分光光度計
NM-001：NMR
NM-005：液中原子間力顕微鏡
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Abstract:
Perovskite
solar cells (PSCs) have recently attracted considerable attention owing to
their remarkable improvement in power conversion efficiency (PCE). The toxicity of lead considerably hinders the
extensive utilization of PSCs. We are concentrating
on Sn-based PSCs to mitigate this toxicity issue. The maximum reported power conversion
efficiency for Sn-PSCs is below 16%, markedly inferior to that of Pb-PSCs. One factor is the tendency of the facial
structure to oxidize from Sn2+ to Sn4+ and the rapid
crystallization rate of perovskite. Our research concentrates on regulating Sn2+
oxidation and establishing uniform electrostatic potential surfaces to
facilitate efficient charge extraction.
The surface of Sn-based perovskite films is prone to oxidation because
of free Sn2+ ions.
To inhibit the oxidation of Sn2+
and form pin-hole free uniform perovskite surface, we conducted both additive
engineering and surface treatment using customized 2D perovskite
materials. These 2D perovskite materials
not only coordinate with free Sn2+ to inhibit Sn oxidation but also
form a pin-hole free uniform perovskite surface, facilitating efficient charge
extraction by the charge transport layer (CTL).
実験 / Experimental
Experimental:
Perovskite Film Fabrication:
A perovskite precursor, comprising ethylenediammonium diiodide,
phenethylammonium iodide, formamidinium iodide, tin (II) iodide, and tin(II)
fluoride in the ratio of 0.01, 0.05:0.94:1:0.1, was combined with a dimethyl
sulfoxide solvent at a concentration of 0.9 m.
Thereafter, the mixture was agitated at room temperature for one
hour. The precursor was applied using
spin coating for 12 and 48 seconds at 1000 and 5000 rpm, respectively. Subsequently, a volume of 160 μL of CB was
added as an anti-solvent at 35 second intervals. The substrate was subsequently annealed at
65°C for a brief duration, followed by an additional 12 minutes at 100°C.
Characterization: A Rigaku RINT-2500
powder X-ray diffractometer utilizing Cu K𝛼 radiation was employed to observe the effect of
additive on the crystallinity of FASnI3 films. An SEM (Hitachi SU-8000) operating at an
acceleration voltage of 2 kV was employed to examine the film morphology and
device architecture. A JEOL ECS 400 NMR
spectrometer operating at 400 MHz was utilized to acquire the proton nuclear
magnetic resonance (1H NMR) spectra that confirm the coordination between
additive and SnI2. A Shimadzu IR Tracer-100 Fourier transform
infrared (FTIR) spectrophotometer was employed to assess the IR transmittance
spectra of FASnI3 films. An atomic force microscope （AFM） in liquid（NanoWizard 4 XP）was used to measure the
roughness of FASnI3 films. Dynamic light scattering （DLS） spectrophotometer
(DLS-8000HAL)was used to determine the particle size of hole-transporting
materials.
結果と考察 / Results and Discussion
Results
and discussion:To confirm the
coordination between the surface-treated additive and free Sn2+, we
performed 1HNMR measurement for the FASnI3 and additive
dissolved in DMSO-d6 solution. From the 1NMR
spectra, we observed that with the addition of additive into precursor
solution, the main resonance picks of additive shifts to the lower ppm value.
This is due to the coordination between SnI2 and the functional
molecules of the additive. From the AFM observation,
we found that surface-treated FASnI3 displayed lower roughness as
compared to the pristine FASnI3 film. This is because surface
treatment with the additive content solution, leveling the film surface. The
addition of additives into the precursor solution should have eminence effects
on the surface morphology. From the SEM measurements, we observed the addition
of additive form pin-hole free uniform FASnI3 film. The additive
slows down the crystallization rate of FASnI3 which helps to grow
pin-hole-free uniform film. The formation of coordination bonds between SnI2
and additive molecules was also confirmed by the FT-IR measurements.
To observe the effects of particle size of
hole-transporting materials on device performance, the DLS was performed and
the results showed that the particle size between 50-80 nm was optimum.
図・表・数式 / Figures, Tables and Equations
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
-
Md. Emrul Kayesh, Optimization of Crystal Growth and Defect Passivation of FASnI3 Film by Using 2-Pyridylthiourea for Sn-Based Perovskite Solar Cells, ACS Applied Energy Materials, 8, 2043-2049(2025).
DOI: 10.1021/acsaem.4c02534
-
Md. Emrul Kayesh, Minimization of Energy Level Mismatch of PCBM and Surface Passivation for Highly Stable Sn‐Based Perovskite Solar Cells by Doping n‐Type Polymer, Small, 20, (2024).
DOI: 10.1002/smll.202402896
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件