CMOS Integrated Circuits [Processing] Formation of gate insulating films using ALD Formation of trench capacitors using deep reactive ion etching (DRIE) Fabrication of SAW filters using piezoelectric films via sputtering [Performance Evaluation] Analysis of contact defects using TEM-EELS
Devices Integrating CMOS Circuits and High-Value-Added Functions (e.g., those prototyped at UTokyo VDEC) [Processing] DNA sequencers based on tunnel current detection using nanoelectrodes formed by steppers
Transistors (Si, GaN, SiC, Diamond, Oxides) [Processing] Formation of gate insulating films on GaN using ALD Electrode fabrication for diamond and SiC quantum devices using multi-target sputtering Mesa formation on GaO using ICP-RIE Formation of oxide semiconductor films using ALD [Performance Evaluation] GaN-HEMT performance evaluation using a power device analyzer
Two-Dimensional Materials (Graphene, hBN, Sulfides) [Processing] Patterning on graphene using electron beam lithography Introduction of defects into graphite using dry etching Formation of Al2O3 gate insulating films on graphene using ALD [Performance Evaluation] Evaluation of ferroelectric properties High-frequency transmission characteristics of graphene nanoribbons Dispersion analysis of graphene tubes using AFM
Photonic-Electronic Integration (Lasers, Bonding, Waveguides, Photonic Integrated Circuits) [Processing] Formation of metasurfaces to enhance GaN emission efficiency using EB lithography and DRIE Deposition of GeSn optoelectronic elements using plasma CVD Formation of Si metasurfaces for room-temperature exciton-polariton-based lasers using DRIE End-face verticalization of SiO2 waveguides using magnetically neutral plasma etching Fabrication of dual-period 2D diffraction grating patterns for narrow-bandpass optical filters using steppers Micro-lens array formation using two-photon polymerization 3D printers
Thermoelectric Power Generation [Processing] Film deposition of Bi-Te-based thermoelectric semiconductors using multi-target sputtering Alumina insulation film deposition on silicon nanowire thermoelectric devices using ALD
Solar Cells [Performance Evaluation] Particle size distribution measurement of ITO nanoparticles for transparent solar cells using AFM SnS? solar cell performance evaluation using a power device analyzer
Organic Semiconductors [Processing] Formation of organic insulating films for organic semiconductors using parylene deposition [Performance Evaluation] OFET performance evaluation using a semiconductor parameter analyzer
Process Materials [Performance Evaluation] Patterning accuracy evaluation of EUV resists using EB lithography Patterning accuracy evaluation of UV-curable resins using nanoimprint equipment Etching resistance evaluation of thick i-line resists using DRIE
3D / 2.5D Integration [Processing] TSV formation using stepper and DRIE TSV insulation film formation using plasma CVD TiN conductive film deposition on TSVs using ALD Glass interposer patterning using magnetically neutral plasma etching RDL (redistribution layer) formation using steppers [Performance Evaluation] Void analysis of micro-bumps using FIB-SEM
Heterogeneous Material Bonding [Processing] Surface hydrophilization by vapor plasma treatment Bonding of Si and ceramic substrates using wafer bonding equipment
Evaluation of Various Devices [Performance Evaluation] Electrical characterization using manual, vacuum, and RF probers, impedance analyzers, network analyzers, and power device analyzers Shape measurement from wafer to chip level using spectroscopic ellipsometers, stylus profilometers, wafer profilers, and AFM Mechanical and reliability evaluation using picoindenters, nanoindenters, and laser Doppler vibrometers Crystallographic and compositional analysis using XRD and ICP-MS
Evaluation
Structural and failure analysis of devices using electron microscopy Visualization of crystal structure, defects, and strain distribution using electron microscopy Evaluation of carrier concentration by TEM-EELS; elemental and chemical bonding analysis in micro-regions
Provided Services (Provided in future)
Evaluation
FE-SEM (Service launch scheduled around February 2026) In addition to conventional FE-SEM functions, the new SXES (soft X-ray emission spectroscopy) function will be added, enabling acquisition of valence band density of states information. Combining this with conduction band density of states information obtained by existing TEM-EELS allows analysis of semiconductor band structures.