利用報告書 / User's Reports

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【公開日:2025.06.10】【最終更新日:2025.04.18】

課題データ / Project Data

課題番号 / Project Issue Number

24QS0106

利用課題名 / Title

Characterization of the excitons in a superatomic semiconductor

利用した実施機関 / Support Institute

量子科学技術研究開発機構 / QST

機関外・機関内の利用 / External or Internal Use

外部利用/External Use

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】(主 / Main)計測・分析/Advanced Characterization(副 / Sub)-

【重要技術領域 / Important Technology Area】(主 / Main)量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions(副 / Sub)-

キーワード / Keywords

Orbital Excitations, Superatom, Exciton, Resonant Inelastic X-ray Scattering,量子効果/ Quantum effect,放射光/ Synchrotron radiation,超伝導/ Superconductivity


利用者と利用形態 / User and Support Type

利用者名(課題申請者)/ User Name (Project Applicant)

Shen Yao

所属名 / Affiliation

Institute of Physics, Chinese Academy of Sciences

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

Zhang Guangkai

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

石井 賢司

利用形態 / Support Type

(主 / Main)共同研究/Joint Research(副 / Sub)-


利用した主な設備 / Equipment Used in This Project

QS-112:共鳴非弾性X線散乱装置


報告書データ / Report

概要(目的・用途・実施内容)/ Abstract (Aim, Use Applications and Contents)

Recently, exciton-polarons with quasi-ballistic propagation have been discovered in a superatomic van der Waals material Re6Se8Cl2, promising for lossless nanoelectronics. However, the electronic character and propagation details of the excitons remain unknown. In the current experiment, we use resonant inelastic x-ray scattering at Re L3 edge to study the electronic structure and excitons by probing the orbital excitations and dispersions.

実験 / Experimental

Resonant inelastic x-ray scattering (RIXS) is a powerful tool to probe various elementary excitations, including charge, orbital, spin and lattice dynamics. The Re6Se8Cl2 single crystal was pre-aligned and mounted to the sample holder using silver paint. We used a cryostat to cool the sample down to 9 K and determine its orientation using two inequivalent Bragg peaks. We collected RIXS energy maps by collecting RIXS spectra with varying incident photon energy. We also performed similar measurements at a high temperature of 300 K to investigate potential thermal fluctuation induced electronic behavior change. All the measurements were conducted at the Re L3 edge with pi polarization (incident photon polarization parallel to the horizontal scattering plane).

結果と考察 / Results and Discussion

We observed well defined electronic excitations above ~1.5 eV energy loss, consistent with its electronic band gap size determined from optical measurements, indicating negligible electronic correlations for this material. We did not observe any exciton-like feature at ~1.4 eV energy loss but weak in-gap excitations were revealed at around 1 eV energy loss right at the resonant peak energy, the origin of which remains unclear.

図・表・数式 / Figures, Tables and Equations
その他・特記事項(参考文献・謝辞等) / Remarks(References and Acknowledgements)


成果発表・成果利用 / Publication and Patents

論文・プロシーディング(DOIのあるもの) / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents

特許出願件数 / Number of Patent Applications:0件
特許登録件数 / Number of Registered Patents:0件

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