【公開日：2025.06.10】【最終更新日：2025.04.02】

課題データ / Project Data

課題番号 / Project Issue Number

24BA0047

利用課題名 / Title

Effect of post annealing on the growth of 2D-MoS₂ using chemical vapor deposition method.

利用した実施機関 / Support Institute

筑波大学 / Tsukuba Univ.

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）革新的なエネルギー変換を可能とするマテリアル/Materials enabling innovative energy conversion（副 / Sub）-

キーワード / Keywords

X線回折/ X-ray diffraction,電極材料/ Electrode material,二次電池/ Secondary battery,環境発電/ Energy Harvesting

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

Islam Muhammad Monirul

所属名 / Affiliation

筑波大学数理物質系

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）,技術補助/Technical Assistance

利用した主な設備 / Equipment Used in This Project

BA-015：X線光電子分光装置

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

We have investigated 2D-MoS₂ synthesized by chemical vapor deposition (CVD) method. To improve the homogeneity of 2D-MoS₂ layer on larger area we have optimized growth parameter during CVD process. Particularly, with study the effect of post annealing effect on the grown MoS₂ layer. 

実験 / Experimental

We have investigated the samples using X-ray Photoelectron Spectroscopy (XPS). We have measured XPS before and after annealing and has investigated the constituent elements in both samples using XPS. 

結果と考察 / Results and Discussion

A drastic change in the XPS results could be observed after post annealing. The XPS specters from the sample before the annealing procedure revealed peaks from three distinct origins. A peak at 226.0 eV and at 225.9 eV which corresponds to the S 2s core level were observed in both samples before and after annealing. The Mo⁺⁴ 3d  spectrum can be found as spllited into two components, the Mo⁺⁴ 3d_5/2 at approximately 228.6 eV and the Mo⁺⁴ d_3/2 at around 231.8 eV. These peaks are assigned to the MoS₂ crystals. These peaks were seen in both pre-annealed and post-annealed samples. Additionally, the Mo⁺⁶  3d spectra which consists of the Mo⁺⁶ 3 d_5/2 at 231.7 eV and the Mo⁺⁶  3 d_3/2  at 234.9 eV were observed in the sample before annealing. These peaks are considered to be originated from the impurities of the MoS₂ crystal such as MoO₃ and MoOS₂. Interestingly, this Mo⁺⁶  3d spectra could not be observed in the measurement of the post-annealed sample. This implies that the annealing in an N2 environment was effective in reducing impurities and enhancing the quality of the MoS₂ crystal. In conclusion, we have found that annealing helps to remove impurities in the grown 2D-MoS₂ film presumably by completing the reaction between MoO3 and Sulphur in the crystal.

図・表・数式 / Figures, Tables and Equations

XPS spectra of MoS₂ film grown by CVD method.

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件