【公開日：2025.06.10】【最終更新日：2025.04.22】

課題データ / Project Data

課題番号 / Project Issue Number

24OS1044

利用課題名 / Title

誘導加熱使い低温半田付けの材料設計

利用した実施機関 / Support Institute

大阪大学 / Osaka Univ.

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）計測・分析/Advanced Characterization

【重要技術領域 / Important Technology Area】（主 / Main）マルチマテリアル化技術・次世代高分子マテリアル/Multi-material technologies / Next-generation high-molecular materials（副 / Sub）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions

キーワード / Keywords

原子薄膜/ Atomic thin film,異種材料接着・接合技術/ Dissimilar material adhesion/bonding technology,電子顕微鏡/ Electronic microscope,CVD,走査プローブ顕微鏡/ Scanning probe microscope,蒸着・成膜/ Vapor deposition/film formation,膜加工・エッチング/ Film processing/etching

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

林 季玄

所属名 / Affiliation

接合科学研究所

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）-

利用した主な設備 / Equipment Used in This Project

OS-115：RFスパッタ成膜装置（絶縁体成膜用）

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

Use RF sputtering Ti/Cu on glass substrate to help joint the glass chip with substrate by induction heating.

実験 / Experimental

Sputter Ti and Cu on glass chip and substrate, by RF sputter machine. When finish sputter, put Sn-Bi/Ni/Sn-Bi layer as solder joint to help bonding sputter glass chip and substrate.

結果と考察 / Results and Discussion

SEM analysis confirmed the successful deposition of sputtered metal layers, with the titanium (Ti) layer exhibiting a thickness of approximately 100 nm and the copper (Cu) layer reaching about 2800 nm. The sputtered layers demonstrated uniform coverage and strong adhesion to the glass surface. Subsequent induction heating bonding yielded well-formed joints, with no significant voids observed. The top chip and substrate sides retained a thick Cu layer, and Cu₆Sn₅ intermetallic compounds with a thickness of around 700 nm were formed. On the Ni insert side, a Ni₃Sn₄ layer of similar thickness was detected. SAT analysis from the top view revealed excellent bonding quality, with a porosity level of less than 8% in the joint area.

図・表・数式 / Figures, Tables and Equations

Fig. 1 Sputter Ti/Cu layer

Fig. 2 Joint layer after induction heating

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件