【公開日：2025.06.10】【最終更新日：2025.05.09】
課題データ / Project Data
課題番号 / Project Issue Number
24UT0098
利用課題名 / Title
ヘテロナノチューブ
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）次世代ナノスケールマテリアル/Next-generation nanoscale materials（副 / Sub）-
キーワード / Keywords
One dimensional van der Waals heterostructures, NbS2 nanotubes, Remote salt strategy, DFT calculation,電子顕微鏡/ Electronic microscope,ナノチューブ/ Nanotube
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
項 栄
所属名 / Affiliation
東京大学大学院工学系研究科機械工学専攻
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ZHENG Yongjia,楊 春霞,DAI WANYU,FENG Ya
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
押川 浩之,木村 鮎美
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
UT-003：超高分解能透過型電子顕微鏡(Cs-HRTEM)
UT-004：環境対応型超高分解能走査透過型電子顕微鏡
UT-007：高分解能分析電子顕微鏡
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
The realization of 1D vdW heterostructures in 2020 was proposed by Maruyama-Chiashi Lab, demonstrated by coaxial assemblies of SWCMTs, BNNTs, and MoS2 nanotubes. This work also suggests that all the current 2D library materials could be rolled into their 1D counterparts. Coaxial 1D heterostructures incorporating semiconducting TMDCs such as MoS2, WS2, MoSe2, and WSe2 have already been demonstrated. Among the potential candidates, NbS2 stands out as a metallic TMDC with additional unique superconductivity and spin electronics properties. Incorporating metallic TMDCs like NbS2 into 1D vdW systems provides opportunities for designing and fabricating more complex 1D heterostructures and devices with unique functionalities.Advancing the synthesis of NbS2 could benefit the development of synthesis techniques of 1D TMDCs in the vdW heterostructures, advancing in more complicated 1D vdW heterostructures fabrication and potential sensors and device applications.
実験 / Experimental
STEM(JEM-ARM200F ColdFE(STEM Double SDD)) and TEM(JEM-ARM200F ColdFE,JEM-2010F) analysis are applied to directly evaluate the synthesis of NbS2 1D vdW heterostructures. EDS mapping was carried out to analyze NbS2 distribution over the SWCNT-BNNT templates.
結果と考察 / Results and Discussion
TEM and STEM analysis shown successiful coxial wrapping of NbS2 nanotubes over the SWCNT-BNNT templates. With STEM analysis, single Nb atoms could be distinguished. Electron diffracion patterns shown bilayer NbS2 nanotubes with small chiral angle displacement of each layer, which might indicate the strong coupling of inner and outer layers. EDS mapping shwon a relative high coverage rate of NbS2 over the SWCNT-BNNT templates, which might indicate high efficency of NbS2 synthesis.
図・表・数式 / Figures, Tables and Equations
Figure 1 : (A) Scheme of SWCNT-BNNT-NbS2 1D vdW heterostructure. (B) Electron diffraction pattern of bilayer NbS2 nanotubes @ SWCNT-BNNT (C) STEM image of bilayer NbS2 nanotubes @ SWCNT-BNNT (D) HRTEM of 1D Heterostructure consists of bilayer NbS2 nanotubes, 5 layers of BNNT and SWCNT. (E) STEM of bilayer NbS2 @ SWCNT-BNNT. Scale Bar: 5 nm
Figure 2. EDS mapping of as acquired SWCNT-BNNT-NbS2 1D vdW heterostructure.
Figure 3 (A) STEM of NbS2 bilayer nanotubes when exposed to atmosphere for 15 min and 24 hours, heavy destruction of atomic structures could be observed in the 24 hours exposed samples. (B-D) Raman spectrum of as synthesized 1D (B), suspended 2D (C) NbS2 @ SWCNT-BNNT, and exfoliated NbS2 @ Si/SiO2 substrate (D). (E) Raman spectrum comparison of as synthesized 1D, suspended 2D NbS2 @ SWCNT-BNNT, and exfoliated 2D NbS2. (F) Peak intensity decay of each sample to exposure time in the atmosphere, starting intensity of each Raman modes set as 100%. (G) Raman modes shift of each sample to exposure time in the atmosphere.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件