【公開日：2025.06.10】【最終更新日：2025.05.09】
課題データ / Project Data
課題番号 / Project Issue Number
24UT0063
利用課題名 / Title
Ⅲ-Ⅴ族半導体-Siハイブリッドプラズモン受光器
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）革新的なエネルギー変換を可能とするマテリアル/Materials enabling innovative energy conversion（副 / Sub）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed
キーワード / Keywords
化合物半導体/ Compound semiconductor,光デバイス/ Optical Device,フォトニクスデバイス/ Nanophotonics device
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
小松 健太郎
所属名 / Affiliation
東京大学工学部電気電子工学科
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
Fu Sheng,脇田 耀介
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Measurement of optical constants of III-V semiconductor MQW (multiple quantum wells) for potential application in photonic devices.
実験 / Experimental
First, to fabricate the III-VOI wafer. I perform wafer bonding with MQW wafer and insulator wafer. That was achieved by plasma activation wafer bonding with O2 plasma. After pressing, and annealing for Van der Waals force to bond wafers. The substrate of III-V wafer is removed by wet etching. At this time, measure the refractive index with an ellipsometer(M-2000DI-T). Second, perform the Quantum well intermixing. In this step, I perform ion implantation with a capping layer deposited. And perform RTA after the ion implantation. Then measure the refractive index with an ellipsometer. Finally, compare the refractive index between the unimplanted and implanted wafer.
結果と考察 / Results and Discussion
Unfortunately, the layer structure for MQW is too complicated, and analysis for refractive index from raw ellipsometer is too difficult for its software (shown in the figure). And, it is also beyond my ability. So I failed to get reasonable results from this experiment.
図・表・数式 / Figures, Tables and Equations
N for whole epi structure with incident angle of 65 degree.
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件