【公開日：2025.06.10】【最終更新日：2025.05.22】

課題データ / Project Data

課題番号 / Project Issue Number

24AT0237

利用課題名 / Title

Silicon wafer dopant activation and silicon wafer dicing

利用した実施機関 / Support Institute

産業技術総合研究所 / AIST

機関外・機関内の利用 / External or Internal Use

外部利用/External Use

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions（副 / Sub）-

キーワード / Keywords

電子線リソグラフィ/ EB lithography,ダイシング/ Dicing,量子コンピューター/ Quantum computer,スピントロニクス/ Spintronics

利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

Klich Wojciech

所属名 / Affiliation

(独)日本学術振興会

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

中島 忠行

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）-

利用した主な設備 / Equipment Used in This Project

AT-089：赤外線ランプ加熱炉（RTA）
AT-093：高速電子ビーム描画装置（エリオニクス）

報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

This project aimed to fabricate and characterize silicon-based spin transport devices. To achieve this, multiple advanced microfabrication tools available through ARIM were utilized. Specifically, a dicing saw was employed to prepare uniform silicon substrates with dimensions of approximately 20 mm × 20 mm, providing the physical base for subsequent device fabrication. Rapid thermal annealing (RTA) was used for dopant activation within silicon layers, a critical process step in modulating the electrical properties of the channel material. A high-speed electron beam lithography system was briefly employed for defining sub-micron device patterns. However, due to limited accessibility and operational constraints, the process was later transitioned to an in-house EBL system. This shift ensured more consistent processing despite slower write times. These steps constitute the technological foundation required for advanced spintronic devices under development.

実験 / Experimental

Fabrication of spin transport devices was carried out using several key instruments provided under ARIM access. Initial sample preparation involved using the dicing saw to produce 20 mm × 20 mm silicon substrates. These substrates were then processed using a high-speed electron beam lithography system to define microstructured features required for spin injection and detection. The throughput and scheduling limitations of the system, however, necessitated a shift to an internal, lower-speed EBL platform to ensure continuous progress. Rapid thermal annealing was conducted using the infrared lamp heating furnace to activate dopants previously introduced into the silicon lattice. These annealing steps are vital for achieving appropriate carrier concentrations and minimizing damage from ion implantation. Each fabrication stage required precise alignment and process control to ensure structural fidelity and device yield.

結果と考察 / Results and Discussion

While the focus of this report is on equipment utilization rather than scientific results, several practical considerations emerged. The high-speed electron beam lithography system offered precise patterning capabilities but was ultimately impractical for routine use due to strict scheduling limitations and preparation overhead. Its brief use allowed comparison with the in-house alternative, highlighting the importance of consistent availability over write speed for extended fabrication workflows. The dicing saw proved effective for generating high-quality silicon samples with minimal edge chipping, facilitating downstream processing. The infrared lamp heating furnace enabled rapid thermal annealing necessary for dopant activation, with consistent temperature ramping and repeatability. These insights are essential for future optimization of fabrication processes involving sensitive multilayer spintronic structures on silicon.

図・表・数式 / Figures, Tables and Equations

その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)

口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.

特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件