【公開日：2025.06.10】【最終更新日：2025.04.14】
課題データ / Project Data
課題番号 / Project Issue Number
24UT1173
利用課題名 / Title
Single cell level electrochemical aptasensors chip based on DEP trapping
利用した実施機関 / Support Institute
東京大学 / Tokyo Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）次世代バイオマテリアル/Next-generation biomaterials
キーワード / Keywords
Silicon-based materials and devices, Optical exposure (maskless and direct drawing), Sputtering,電子線リソグラフィ/ EB lithography,センサ/ Sensor,リソグラフィ/ Lithography,MEMS/NEMSデバイス/ MEMS/NEMS device,細胞培養デバイス/ Cell Culture Device,スパッタリング/ Sputtering,光リソグラフィ/ Photolithgraphy,膜加工・エッチング/ Film processing/etching
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
金 秀炫
所属名 / Affiliation
東京大学生産技術研究所
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
UT-503：超高速大面積電子線描画装置
UT-505：レーザー直接描画装置 DWL66+2018
UT-711：LL式高密度汎用スパッタリング装置 (2018)
UT-604：高速シリコン深掘りエッチング装置
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
Micro/Nano patterns are fabricated on silicon/silicon oxide substrate by using laser writing or e-beam lithography, gold thin films are deposited by using sputtering machine, special structure of silicon substrate is fabricated by DRIE.
実験 / Experimental
Laser lithography, E-beam lithography and metallization processes were mainly used
for two designs. The details of the process for are shown below.
i. The Si/SiO2 substrate is cleaned by
sonication in a bath of acetone and ethanol for 5min, respectively, then dried
with blowing nitrogen at room temperature.
ii. ZEP520A/HSQ and OFPR800LB 150cP resists are
used for E-beam and Laser writing, respectively. The spin-coating parameter for ZEP520A is 4000 rpm and 60s. The spin-coating parameter for HSQ is 5000 rpm and 60s. The spin-coating parameter for OFPR800LB 150cP is 3000 rpm and 30s.
iii. E-beam exposure or Laser
exposure. The E-beam dose for ZEP520A and HSQ is 104 μC/cm2 and 500 μC/cm2 , respectively. The laser power is 300 mW.
iv. After e-beam or laser writing, the sample is put in the right
developer (ZED-N50 for ZEP520A, NMD-3 for HSQ and NMD-W for OFPR800LB 150cP) for appropriate time and followed with rinsing under flowing DI water
and dried with nitrogen.
v. The gold thin films are deposited by using Sputter
CFS-4EP-LL i-Miller. The thickness is 20nm.
結果と考察 / Results and Discussion
Figure 1 shows the optical microscope image of the gold electrodes pattern, which shows a good profile of electrode. The size of the electrode is 100 μm. The width of contact part is 50 μm. Figure 2 shows the atomic force microscope image of HSQ nanopillars. The height of nanopillar is around 20 nm. The distance between each nanopillar is 200 nm, which is suitable for supporting cell to maintain the electron transition from redox function group modified on aptamer to electrode.
図・表・数式 / Figures, Tables and Equations
Figure. 1 Gold electrode
Figure. 2 (a) 3D view of HSQ nanopillar scanned by AFM (b) Nanopillar area on electrode (c) Profile of nanopillar
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
- Hanye Dai, Shuo Li, Katsuhiko Nishiguchi, Akira Fujiwara, Nicolas Clément and Soo Hyeon Kim, CHEMINAS49 (Tokyo), 1st, June, 2024
- Hanye Dai, Shuo Li, Akira Fujiwara, Nicolas Clément and Soo Hyeon Kim, , MicroTAS24 (Montreal, Canada), 14th, October, 2024
- Hanye Dai, Shuo Li, Akira Fujiwara, Nicolas Clément and Soo Hyeon Kim, CHEMINAS50 (Sendai), 27th, Novermber, 2024
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件