【公開日：2025.06.10】【最終更新日：2025.05.13】
課題データ / Project Data
課題番号 / Project Issue Number
24IT0049
利用課題名 / Title
Fabrication of nanopore arrays on suspended monolayer molybdnum disulfide
利用した実施機関 / Support Institute
東京科学大学 / Science Tokyo
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者）/Internal Use (by ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）次世代ナノスケールマテリアル/Next-generation nanoscale materials（副 / Sub）-
キーワード / Keywords
電子線リソグラフィ/ EB lithography,原子層薄膜/ Atomic layer thin film
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
徐 偉倫
所属名 / Affiliation
東京大学大学院工学系研究科機械工学専攻
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
Chien Hsu
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
梅本 髙明
利用形態 / Support Type
（主 / Main）技術代行/Technology Substitution（副 / Sub）-
利用した主な設備 / Equipment Used in This Project
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
In order to study the effect of pore spacing on MoS2 monolayer pore array systems, a fabrication procedure for preparing the desired membranes was proposed. The goal is to study the differences between single-pore and multi-pore systems. Typically, a pore on a SiNx chip is covered with a MoS2 monolayer, and then a pore array is created on top of it using E-beam lithography method. The prepared sample will first be covered with photoresist and then exposed. The pattern can be created after the development process. The pores can be milled by dry etching. However, it is necessary to check whether the E-beam process and development are successful. By confirming whether the pattern on SiNx can be observed, it can be determined whether the applied recipe is applicable for the proposed fabrication process. In addition, to avoid uncertainty during the exposure process, a larger exposure area (5 μm x 5 μm) was chosen. Currently, a hexagonal pore array pattern is selected for the system, and PMMA is selected as the photoresist to protect the target ample.
実験 / Experimental
The prepared SiNx chip samples (3 mm x 3 mm) were first mounted on a Si substrate (15 mm x 15 mm) and exposed to an ozone cleaning process for 20 min to clean the sample surface. The samples were then spin-coated with 50 nm PMMA and exposed with an E-beam using a designed exposure array pattern with each pore having a diameter of 40 nm and a pore spacing of 80 nm. After the development process, the samples were observed by SEM.
結果と考察 / Results and Discussion
The array pattern on PMMA over SiNx can be found by SEM. The results showed that the pattern is successfully created by the proposed method. Each pore size within the array pattern having a diameter of ca. 40 nm and a pore spacing of ca. 80 nm. The results gathered here illustrated that the current recipe may be applied to the SiNx chip with a free standing MoS2 monolayer over a FIB milled pore.
図・表・数式 / Figures, Tables and Equations
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件