【公開日：2025.05.12】【最終更新日：2025.05.12】
課題データ / Project Data
課題番号 / Project Issue Number
23BA0043
利用課題名 / Title
Measurement of several core-levels in CsPbI3 thin film
利用した実施機関 / Support Institute
筑波大学 / Tsukuba Univ.
機関外・機関内の利用 / External or Internal Use
内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)
技術領域 / Technology Area
【横断技術領域 / Cross-Technology Area】（主 / Main）計測・分析/Advanced Characterization（副 / Sub）-
【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）-
キーワード / Keywords
Thin films, Surface and interface,センサ/ Sensor,電子分光/ Electron spectroscopy
利用者と利用形態 / User and Support Type
利用者名（課題申請者）/ User Name (Project Applicant)
JUNG Min-Cherl
所属名 / Affiliation
筑波大学理工学群応用理工学類
共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes
油井大地
ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes
岡野彩子
利用形態 / Support Type
（主 / Main）機器利用/Equipment Utilization（副 / Sub）,技術補助/Technical Assistance
利用した主な設備 / Equipment Used in This Project
BA-026：多機能走査型X線光電子分光分析装置（XPS/UPS）
報告書データ / Report
概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)
To observe the change of chemical states in all inorganic perovskite, CsPbI3/Si(100) thin film before and after air exposure, we perform high-resolution x-ray photoelectron spectroscopy. Before the main experiment, we need to confirm the spacial resolution of XPS system and confirmation of the chemical state of substrate, Si(100). Our aim is 1) Confirmation of the XPS resolution and chemical states of Si(100) substrate and 2) Obtaining of several chemical states of CsPbI3/Si(100) thin film before and after the air exposure.
実験 / Experimental
1) Obtain the chemical states of Si(100) substrate - Si 2p, O 1s and C 1s core-levels 2) Obtain the chemical states of CsPbI3/Si(100) thin film - Cs 3d, Pb 4f, I 3d, O 1s, and C 1s core-levels before and after the air exposureFrom the X-ray diffraction (XRD) experiment, we understood the atomic phase was delta. It means the sample needed to perform annealing process to change its atomic structure from delta to gamma. To change the atomic structure, we performed in-situ annealing in the XPS heating system. And then we started the air exposure for 1, 5, 10, 30, and 60 min.
結果と考察 / Results and Discussion
1. For Si(100), we obtained three core-level spectra and confirmed the typical Si(100) peaks. 2. For CsPbI3/Si(100), we obtained five core-level spectra before and after the air exposure. Interestingly, the chemical states of CsPbI3 were not changed originally in the air exposure. However, we observed Pb-O and Pb0+ states in the Pb 4f core-level spectra. It means that only Pb element is changed by the air exposure on the surface. As increasing the air exposure time, the original chemical states of CsPbI3 were still not changed.
図・表・数式 / Figures, Tables and Equations
Figure 1. XRD and XPS data of CsPbI3/Si(100) before and after the air exposure
その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)
We will make a simple manuscript with these findings soon.This work was supported by JSPS KAKENHI (grant no. 23K04566, Japan).
成果発表・成果利用 / Publication and Patents
論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents
特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件