利用報告書 / User's Reports

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【公開日：2025.07.07】【最終更新日：2025.07.03】

課題データ / Project Data

課題番号 / Project Issue Number

23NM5297

利用課題名 / Title

Diamond MEMS and electronics

利用した実施機関 / Support Institute

物質・材料研究機構 / NIMS

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）高度なデバイス機能の発現を可能とするマテリアル/Materials allowing high-level device functions to be performed（副 / Sub）-

キーワード / Keywords

アクチュエーター/ Actuator,MEMS/NEMSデバイス/ MEMS/NEMS device,センサ/ Sensor,蒸着・成膜/ Vapor deposition/film formation,ALD,CVD,スパッタリング/ Sputtering


利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

Liao Meiyong

所属名 / Affiliation

物質・材料研究機構

共同利用者氏名 / Names of Collaborators Excluding Supporters in the Hub and Spoke Institutes

Zilong Zhang

ARIM実施機関支援担当者 / Names of Supporters in the Hub and Spoke Institutes
利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）-


利用した主な設備 / Equipment Used in This Project

NM-636：マスクレス露光装置 [DL-1000]
NM-617：ICP-RIE装置 [RV-APS-SE]
NM-633：SiO2プラズマCVD装置 [PD-220NL]
NM-607：スパッタ装置 [CFS-4EP-LL #3]


報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

Diamond is a promising material for MEMS with high performance and high reliability by virtue of its outstanding mechanical properties, ultra-wide bandgap energy, the highest thermal conductivity and chemical inertness. We have been developing diamond MEMS magnetic sensors for high-temperature applications. We thus fabricated various diamond MEMS structures integrated with magnetic materials. We also investigated the improvement of the quality factors of the diamond MEMS resonators.

実験 / Experimental

The diamond sample was firstly patterned by the photolithography with designed resonators structures. Then, a metallic thin film was deposited on the patterned diamond samples, followed by a lift-off process. Next, an reactive ion etching was conducted to etch the diamond with the protection of the patterned metal. A release process was finally conducted to fabricate the freestanding diamond MEMS structure. To fabricate the MEMS magnetic sensor,a FeGa thin film was deposited on the diamond resonators. We developed an on-chip diamond MEMS magnetic sensor. We also fabricated diamond MOSFET.

結果と考察 / Results and Discussion

The magnetrostictive FeGa film plays triple functions as actuation electrode, sensing head for magnetic fields and electrical readout unit. The SCD-based MEMS magnetic transducer exhibited high-temperature operation up to 500℃ with a high-sensitivity of 3.2 Hz/mT and a low noise level of 9.45 nT/Hz1/2 at 300℃. The minimum fluctuation of the resonance frequency can reach 1.9×10-6 at room temperature and 2.3×10-6 at 300oC. The magnetic field resolution is less than 10 nT even at 300oC. The prototype SCD-based MEMS magnetic transducers array was developed with the achievement of the parallel signal readout. The magnetic sensing performances can be further enhanced by the nanoscale size design, a high quality factor, and a huge magneto-strictive thin film. The current work ensures the SCD-based MEMS magnetic transducers integration with electronics and paves the way for the development of magnetic image sensors with high sensitivity and high reliability as well as tunable spatial resolution. In addition, the first n-type diamond MOSFET was developed.

図・表・数式 / Figures, Tables and Equations


Figure 1. Measurement setup and resonance performances of the SCD-based resonators.A) Schematic diagram of the measurement setup for the SCD-based cantilever magnetic transducer with the on-chip self-sensing and actuation configuration. LPF: low frequency filter. B) Optical images of a 160 μm-long SCD-based cantilever magnetic transducer. C) Magnetic sensing principle of a cantilever resonator with a resonance frequency shift. D) Schematical image of the measurement setup with an optical readout system. E) Simulation of the electric field distribution of a SCD-based resonator with on-chip actuation . The S-D electrodes are grounded and Vac g=1 V. F) The typical resonance frequency spectra of a 160 μm-long SCD-based cantilever. The inset showing the motion amplitude having linear dependence on the gate voltage. G) The resonance frequencies and H) Q factors of SCD-based cantilevers dependence on the length L without and with the deposition of FeGa/Ti film.



Figure 2. Resonance performances of the SCD-based cantilever transducer with on-chip actuation and sensing scheme. A) Resonance frequency spectra of a 160 μm-long SCD-based cantilever transducer measured by the electrical readout system at various Vac sd and Vac g=3 V @25℃. The resonance frequency shifts downward with the Vac sd increasing. B) Dependences of Q factors on Vac sd at Vac g=3 V @25℃. C) Resonance frequency spectra of a 160 μm-long SCD-based cantilever transducer measured by the electrical readout system at various Vac g and Vac sd=8 V @25℃. D) Variations of Q factors with Vac g at Vac sd=8 V. E) Resonance frequency spectra of a 160 μm-long SCD-based cantilever transducer measured via the electrical readout system from 25℃ to 500℃ at Vac sd =3 V and Vac g=7 V. F) Resonance frequencies and Q factors as a function of the temperature.



Figure 3. High-temperature magnetic transducing performance through on-chip actuation and sensing. A) Resonance frequency shift of a 160 μm-long SCD-based cantilever transducer as a function of the measurement temperature at a magnetic field of 2.82 mT, and at Vac sd =4 V and Vac g=7 V from 25℃ to 500℃. The peak amplitude of etch spectrum is normalized. B) Resonance frequency shifts of the magnetic transducer vs the measurement temperature at different magnetic fields. C) Q factor variations of the magnetic transducer vs temperature without and with applying a magnetic field of 2.82 mT. D) Magnetic noise spectra of the magnetic transducer at 25℃ and 300℃.



Figure 4. Magnetic transducing performances with changing Vac sd and Vac gat room tempeature. A) Resonance frequency spectra of a 160 μm-long SCD-based magnetic transducer response to a magnetic field of 2.82 mT by changing Vac sd at Vac g=3 V. B) Tuning of resonance frequency shift of the magnetic transducer via Vac sd under a magnetic field of 2.82 mT at Vac g=3 V. C) Dependence of the Q factors of the magnetic transducer on Vac sd without and with a magnetic field of 2.82 mT. Vac g is fixed at 3 V. D) Resonance frequency spectra of the magnetic transducer response to a magnetic field of 2.82 mT by changing Vac g at Vac sd=3 V. E) Resonance frequency shifts of the magnetic transducer as a function of Vac g under a magnetic field of 2.82 mT at Vac sd=3 V. F) Variation of Q factors of the magnetic transducer as Vac g without and with a magnetic field of 2.82 mT. Vac sd is fixed at 3 V.


その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)


成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
  1. Zilong Zhang, On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film, Advanced Functional Materials, 33, (2023).
    DOI: DOI: 10.1002/adfm.202300805
  2. Zilong Zhang, Effect of defects on Q factors of single-crystal diamond MEMS resonators, Functional Diamond, 3, (2023).
    DOI: DOI: 10.1080/26941112.2023.2221280
  3. Guo Chen, Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS, Diamond and Related Materials, 138, 110240(2023).
    DOI: DOI: 10.1016/j.diamond.2023.110240
  4. Zilong Zhang, Effect of defects on Q factors of single-crystal diamond MEMS resonators, Functional Diamond, 3, (2023).
    DOI: DOI: 10.1080/26941112.2023.2221280
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
  1. 廖 梅勇, ジャン ジロン, 陳 果, 小出 康夫, 戸田　雅也, 小泉 聡. オンチップダイヤモ ンドMEMS 磁気トランスデューサ. 第３７回ダイヤモンドシンポジウム. 2023.11
  2. CHEN, Guo, ZHANG, Zilong, GU, Keyun, KOIZUMI, Satoshi, Zhaohui Huang, LIAO, Meiyong. Effect of Energy Dissipation in Higher-Order Resonance on SCD MEMS Cantilevers Toward High f·Q. 2023年第84回応用物理学会秋季学術講演会. 2023.9
  3. ZHANG, Zilong, CHEN, Guo, GU, Keyun, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. Effect of magnetostrictive film thickness for enhancing magnetic sensing performance of diamond MEMS resonator. 2023年第84回応用物理学会 秋季学術講演会. 2023.9
  4. LIAO, Meiyong. On-chip Diamond MEMS: concept and sensing applications. European Materials Research Society (E-MRS) 2023 Fall meeting. 2023.9
  5. ZHANG, Zilong, CHEN, Guo, Guangchao Chen, KOIZUMI, Satoshi, KOIDE, Yasuo, LIAO, Meiyong. ON-CHIP DIAMOND MEMS RESONATORS MAGNETIC SENSING UP TO 500℃. The 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2023). 2023.6
  6. CHEN, Guo, ZHANG, Zilong, SANG, Liwen, KOIDE, Yasuo, KOIZUMI, Satoshi, Zhaohui Huang, LIAO, Meiyong. Sensing the point defects by single-crystal diamond MEMS resonators. The 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2023). 2023.6
  7. ZHANG, Zilong, CHEN, Guo, SANG, Liwen, KOIDE, Yasuo, KOIZUMI, Satoshi, LIAO, Meiyong. High-temperature diamond MEMS magnetic sensor with on-chip actuation and sensing. 第70回応用物理学会春季学術講演会. 2023.3
特許 / Patents

特許出願件数 / Number of Patent Applications：1件
特許登録件数 / Number of Registered Patents：1件

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